Abstract
The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500 °C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H).
References
[1] D.S. Kim, Y.H. Lee, Thin Solid Films 261 (1995) 192. [2] G. Ambrosone, U. Coscia, S. Ferrero, F. Giorgis, P. Mandracci, C.F. Pirri, Phil. Mag. B 82 (2002) 35. [3] G. Ambrosone, U. Coscia, S. Lettieri, P. Maddalena, C. Privato, S. Ferrero, Thin Solid Films 82 (2001) 35. [4] Dewi Marianty, Lusitra Munisa, Rosari Saleh, Makara Seri Sains 5 (2001) 51. [5] Rosari Saleh, Lusitra Munisa, Dewi Marianty, Makara Seri Sains 6 (2002) 59. [6] T. Friessneg, M. Boudreau, J. Brown, P. Mascher, P.J. Simpson, W. Puff, J. Appl. Phys. 80 (1996) 2216. [7] A.S. Volkov, H. Herremans, W. Grevendonk, V. Baptist, S.V. Chernyshov, O.I. Konjkov, W. Lauwerens, G.J. Adriaenssens, Solid State Commun. 80 (1991) 383. [8] F. Demichelis, C.F. Pirri, E. Tresso, G. Benedetto, Phil. Mag. B 63 (1991) 1223. [9] J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 15 (1966) 627. [10] A. Carbone, F. Demichelis, G. Kaniadakis, J.Non-Cryst. Solids 128 (1991) 139. [11] D.K. Basa, Thin Solid Films 250 (1994) 187. [12] D.Gracin, M. Ivanda, S. Lugomer, N. Radić, U.V. Desnica, Appl. Surf. Sci. 70-71 (1993) 686. [13] J.-H. Chen, W.-J. Sah, S.-C. Lee, J. Appl. Phys. 70 (1991) 125. [14] D.K. Basa, F.W. Smith, Thin Solid Films 192 (1990) 121. [15] D.Gracin, N. Radić, M. Ivanda, Ž. Andreić, B. Praček, Thin Solid Films 317 (1998) 206. [16] K. Mui, F.W. Smith, Phy. Rev. B 35(1987) 8080 [17] Mersi Kurniati, Lusitra Munisa, Rosari Saleh, Makara Seri Sains 5 (2001) 62. [18] G.A.N. Connel, J.R. Pawlik, Phys. Rev. B 16 (1977) 3556. [19] R. Tsu, P. Menna, H. Mahan, Solar Cells 21 (1987) 189
Recommended Citation
Saleh, Rosari; Munisa, Lusitra; and Marianty, Dewi
(2003)
"PENGARUH ANIL TERMAL TERHADAP BESARAN OPTIS LAPISAN TIPIS a-SiC:H HASIL METODE DC SPUTTERING I. TARGET SILIKON,"
Makara Journal of Science: Vol. 7:
Iss.
1, Article 6.
Available at:
https://scholarhub.ui.ac.id/science/vol7/iss1/6
