STUDI DISORDER LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) HASIL DEPOSISI METODE DC SPUTTERING

Authors

Lusitra Munisa, Program Studi Ilmu Fisika, Program Pascasarjana Universitas Indonesia, Jakarta,10430Follow
Rosari Saleh, Jurusan Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Indonesia, Depok,16424

Abstract

Disorder Study of Amorphous Silicon Carbon (a-SiC:H) Films Deposited by DC Sputtering Method. Disorder amorphous network of amorphous silicon carbon (a-SiC:H) films has been investigated for films prepared by dc sputtering method. The films were deposited using silicon target in argon and methane gas mixtures. The optical absorption coefficients have been performed by UV-VIS (ultra violet-visible) reflectance and transmittance spectroscopy. Disorder parameter has been obtained from the optical absorption coefficient α (E) using Tauc plot. Increasing methane flow rate has an effect on increasing Tauc gap and decreasing disorder parameter. The amorphous network of the films tends to be more disorder with increasing methane flow rate. The relation of disorder amorphous network with structural and compositional properties will be discussed.

References

[1] R.A. Street, Phys. Rev. B 44 (1991) 10610. [2] Patrick R. Mc.Curdy, Jason. M. Truiit, Ellen R. Fisher, J. Vac. Sci. Technol.A 17(1999) 2475. [3] W. Beyer, H. Wagner dan H. Mell, Mat. Res. Soc. Symp.Proc. 49 (1985) 189. [4] Y. Hishikawa, N. Nakamura, S. Tsuda, S. Nakano, Y. Kishi, Y. Kuwano, Jap. J. Appl. Phys. 30 (1991) 1008. [5] J. Tauc, R. Grigorocivi, A. Vancu, Phys. Stat. Sol. 15 (1966) 627. [6] Lusitra Munisa, Rosari Saleh, Makara Seri Sains 6 (2002) 46. [7] Rosari Saleh, Lusitra Munisa, Makara Seri B (2000) 54. [8] R. Saleh, L. Munisa, W. Beyer, F. Finger, R. Carius, Physics Journal-IPS 2 (1999) 41. [9] I. Pereyra, M.N.P. Carreño, J. Non-Cryst. Solids 201 (1996) 110. [10] A.R. Zanatta, I. Chambouleyron, Phys. Rev. B 53 (1996) 3833. [11] Rosari Saleh, Lusitra Munisa, Wolfhard Beyer, Physics Journal-IPS 4 (2001) 28. [12] Rosari Saleh, Lusitra Munisa, Jurnal Fisika-HFI A 4 (2002) 0202. [13] G. De Cesare, F. Galluzzi, G. Guattari, G. Leo, R. Vincenzoni, Diam. Relat. Matt. 2 (1993) 773.

Recommended Citation

Munisa, Lusitra and Saleh, Rosari (2002) "STUDI DISORDER LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) HASIL DEPOSISI METODE DC SPUTTERING," Makara Journal of Science: Vol. 6: Iss. 2, Article 5.
Available at: https://scholarhub.ui.ac.id/science/vol6/iss2/5