Effect of Dry Oxidation and Thermal Annealing on AlN/GaN/AlN/Si (111) and Evaluation of its Electrical Characteristics

Authors

Mohd Zaki Mohd Yusoff, Department of Applied Sciences, Universiti Teknologi MARA, Cawangan Pulau Pinang, Permatang Pauh 13500, MalaysiaFollow
Azzafeerah Mahyuddin, Universiti Kuala Lumpur, Malaysian Institute of Industrial Technology (MITEC), Bandar Seri Alam, Johor 81750, Malaysia
Zainuriah Hasssan, Institute of Nano-Optoelectronics Research and Technology, Universiti Sains Malaysia, Penang 11800, Malaysia
‪Muhammad Syarifuddin Yahya, Faculty of Ocean Engineering Technology and Informatics, Universiti Malaysia Terengganu, Kuala Nerus 21030, Terengganu, Malaysia

Abstract

We proposed a technique for improving the platinum (Pt) Schottky contact dark current of the AlN/GaN/AlN/Si(111) substrate. The AlN/GaN/AlN/ heterostructure sample was successfully grown on a silicon substrate by radio frequency molecular beam epitaxy. The high quality of the interlayer heterostructure sample was verified by transmission electron microscopy (TEM). From the TEM image, a good quality single interface layer with spacing less than 1 nm was detected. The strong significant peaks obtained by X-ray diffraction measurement indicated that the sample has a high structural quality for each grown layer. Dry oxidation and thermal annealing were used in conjunction to effectively reduce the leakage current of the Schottky contact of the AlN/GaN/AlN/Si(111) substrate. Energy-dispersive X-ray analysis revealed the presence of the element oxygen. Dry oxidation enhanced the surface roughness and surface-active area of the samples. Al₂O₃ contributed to the low leakage current of the Pt Schottky contact of the AlN/GaN/AlN/Si(111) substrate. The Al₂O₃ layer acted as an insulator layer, and retarded the current flow of devices.

Recommended Citation

Mohd Yusoff, Mohd Zaki; Mahyuddin, Azzafeerah; Hasssan, Zainuriah; and Yahya, ‪Muhammad Syarifuddin (2021) "Effect of Dry Oxidation and Thermal Annealing on AlN/GaN/AlN/Si (111) and Evaluation of its Electrical Characteristics," Makara Journal of Science: Vol. 25: Iss. 4, Article 2.
DOI: 10.7454/mss.v25i4.1249
Available at: https://scholarhub.ui.ac.id/science/vol25/iss4/2