Optic Properties on AgGaSe2 Polycristal Fabrication

Authors

A. Harsono Soepardjo, Departemen Fisika, FMIPA, Universitas Indonesia, Depok 16424, IndonesiaFollow
I Dewa Made Janusetiawan, Program Pascasarjana Ilmu Material, FMIPA, Universitas Indonesia, Depok 16424, Indonesia

Abstract

Optic Properties on AgGaSe2 Polycristal Fabrication. Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, c = 8,8854 Å, and c/a = 2,01426.

Bahasa Abstract

Polikristal AgGaSe2 adalah senyawa (I-III-VI2) suatu semikonduktor sebagai bahan dasar pembuatan lapisan tipis (thin film) untuk sel surya. Polikristal tersebut telah berhasil ditumbuhkan dengan metoda tungku Bridgmann tegak, dengan memanaskan sampai temperatut 850°C kemudian didinginkan perlahan-lahan sampai temperatur kamar. Hasil yang didapatkan berupa ingot (batangan) dengan panjang lebih kurang 3 cm dan diameter 13 mm. Dengan menggunakan XRay Refraction didapatkan komposisi masing masing unsur berat % adalah Ag = 29,3996 %, Ga = 36,8123 % dan Se = 30,29 % sedangkan pengukuran dengan X-Ray Difraction didapatkan parameter kisinya dihitung a = 4,4112 Å, c = 8, 8854 Å dan c/a = 2,01426.

References

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Recommended Citation

Soepardjo, A. Harsono and Janusetiawan, I Dewa Made (2004) "Optic Properties on AgGaSe2 Polycristal Fabrication," Makara Journal of Technology: Vol. 8: Iss. 3, Article 5.
DOI: 10.7454/mst.v8i3.263
Available at: https://scholarhub.ui.ac.id/mjt/vol8/iss3/5