Abstract
Optic Properties on AgGaSe2 Polycristal Fabrication. Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, c = 8,8854 Å, and c/a = 2,01426.
Bahasa Abstract
Polikristal AgGaSe2 adalah senyawa (I-III-VI2) suatu semikonduktor sebagai bahan dasar pembuatan lapisan tipis (thin film) untuk sel surya. Polikristal tersebut telah berhasil ditumbuhkan dengan metoda tungku Bridgmann tegak, dengan memanaskan sampai temperatut 850°C kemudian didinginkan perlahan-lahan sampai temperatur kamar. Hasil yang didapatkan berupa ingot (batangan) dengan panjang lebih kurang 3 cm dan diameter 13 mm. Dengan menggunakan XRay Refraction didapatkan komposisi masing masing unsur berat % adalah Ag = 29,3996 %, Ga = 36,8123 % dan Se = 30,29 % sedangkan pengukuran dengan X-Ray Difraction didapatkan parameter kisinya dihitung a = 4,4112 Å, c = 8, 8854 Å dan c/a = 2,01426.
References
I Dewa Made Janusetiawan, Tesis Magister, Program Studi Ilmu Material, Program PascasarjanaFMIPA, Universitas Indonesia, Indonesia, 2001.
L. L. Kazmerski, F. R. White, M. S. Ayyagari, Y. J. Juang, R. P. Patterson, J. Vac. Sci. Technol. 14 (1977) 65.
S. Isomura, A. Nagamatsu, K. Shinohara, T. Aono, Solar Cell 16 (1986) 143.
R. Noufi, J. Dick, J. Appl. Phys. 58 (1985) 3884.
L. Stolt, J. Hedström, J. Kessler, M. Ruckh, K-O. Velthaus, H-W. Schock, Appl. Phys. Lett. 62 (1993) 597.
R. W. Birkmire, J. L. Phillips, Stable High Efficiency CuInSe2 Based Polycristalline Thin Films Tandem Solar Cell, Final Report, S.E.R.I Report No.SERI/STR 211-3249, 1987.
L. S. Palatnik, E. K. Belova, Neorgan. Mater.3 (1967) 2194.
A. Congiu, L. Garbado, P. Manca, Mat. Res. Bull. 8 (1973) 293.
D.W. Jones, In: C.H.L Goodmann (Ed.), Refractory Metal Crystal Growth Techniques, Crystal Growth Theory and Technique, vol. 1, Plenum Press, New York, 1980.
A.H. Soepardjo, Dr. Thesis, Universite Montpellier II, Perancis, 1993.
Recommended Citation
Soepardjo, A. Harsono and Janusetiawan, I Dewa Made
(2004)
"Optic Properties on AgGaSe2 Polycristal Fabrication,"
Makara Journal of Technology: Vol. 8:
Iss.
3, Article 5.
DOI: 10.7454/mst.v8i3.263
Available at:
https://scholarhub.ui.ac.id/mjt/vol8/iss3/5
Included in
Chemical Engineering Commons, Civil Engineering Commons, Computer Engineering Commons, Electrical and Electronics Commons, Metallurgy Commons, Ocean Engineering Commons, Structural Engineering Commons