Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

Authors

Veerappan Manimuthu, Department of Nanovision Technology, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011, JapanFollow
Shoma Yoshida, Department of Nanovision Technology, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011, Japan
Yuhei Suzuki, Department of Nanovision Technology, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011, Japan
Faiz Salleh, Department of Nanovision Technology, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011, Japan
Mukannan Arivanandhan, Department of Nanovision Technology, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011, Japan
Yoshinari Kamakura, Graduate School of Engineering, Osaka University, 1-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Yasuhiro Hayakawa, Department of Nanovision Technology, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011, Japan
Hiroya Ikeda, Department of Nanovision Technology, Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu 432-8011, Japan

Abstract

In order to build high-sensitivity infrared photodetectors using SiGe nanowires, we investigate the thermoelectric characteristics of Ge-on-insulator (GOI) layers as a reference for SiGe. We fabricate p-type GOI substrates with an impurity concentration of 1016-1018cm-3 by a wafer-bonding process using Ge and oxidized Si wafers. Annealing treatment is performed in order to further increase the bonding strength of Ge/SiO2 interface. We measure the Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is very close to the theoretical value for Ge, calculated on the basis of carrier transport. Hence, there is a small phonon-drag effect in GOI. On the other hand, the effect of phonon drag on the Seebeck coefficient of Si is usually significant. These results likely stem from the differences between phonon velocity, phonon mean-free-path, and hole mobility between Ge and Si.

Bahasa Abstract

Kontribusi Tarikan Fonon terhadap Koefisien Seebeck Substrat Ge-On-Insulator yang Difabrikasi dengan Proses Pengikatan Wafer. Untuk membuat sebuah fotodetektor infra merah bersensitivitas tinggi dengan kawat-kawat nano SiGe, kami menyelidiki ciri-ciri termoelektrik dari lapisan-lapisan Ge-on-insulator (GOI) sebagai rujukan untuk SiGe. Kami memfabrikasi substrat-substrat GOI tipe-p dengan konsentrasi impuritas sebesar 1016-1018cm-3 melalui proses pengikatan wafer menggunakan wafer-wafer Ge dan Si yang teroksidasi. Perlakuan aniling diterapkan untuk semakin menambah kekuatan ikat antarmuka Ge/SiO2. Kami mengukur koefisien Seeback pada rentangan suhu 290- 350 K. Koefisien Seebeck dari lapisan-lapisan GOI itu nyaris serupa dengan angka teoretis untuk Ge yang diperhitungkan berdasarkan transpor pembawa. Jadi, terdapat efek tarikan fonon kecil pada GOI. Di pihak lain, efek tarikan fonon pada koefisien Seebeck Si umumnya terjadi secara signifikan. Hasil yang demikian mungkin diakibatkan oleh perbedaan antara kecepatan fonon, jalur bebas purata fonon, dan mobilitas lubang antara Ge dan Si.

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Recommended Citation

Manimuthu, Veerappan; Yoshida, Shoma; Suzuki, Yuhei; Salleh, Faiz; Arivanandhan, Mukannan; Kamakura, Yoshinari; Hayakawa, Yasuhiro; and Ikeda, Hiroya (2015) "Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process," Makara Journal of Technology: Vol. 19: Iss. 1, Article 5.
DOI: 10.7454/mst.v19i1.3026
Available at: https://scholarhub.ui.ac.id/mjt/vol19/iss1/5