Seebeck Coefficient of SOI Layer Induced by Phonon Transport

Authors

Faiz Salleh, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, JapanFollow
Takuro Oda, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Yuhei Suzuki, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Yoshinari Kamakura, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Japan
Hiroya Ikeda, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

Abstract

The Seebeck coefficient of a patterned Si wire on P-doped SOI (Si-on-insulator) layer with a carrier concentration of 1018 cm-3 was measured near room temperature. The Seebeck coefficient is found to be smaller than that in the SOI layer and to be closer to the calculated Seebeck coefficient including the electronic contribution. The decrease in the Seebeck coefficient of Si wire is likely to occur due to the elimination of the contribution of phonon drag part. From the theoretical calculation of scattering rates by considering the scattering processes in phonon system, it is considered that an increase in phonon-boundary scattering and simultaneously a decrease at the cross section of SOI layer are likely responsible for eliminating the phonon drag effect.

Bahasa Abstract

Koefisien Seebeck Lapisan SOI yang Diinduksi oleh Transpor Phonon. Koefisien Seebeck pada kawat Si berpola pada lapisan SOI bersalut-P dengan konsentrasi pembawa sebesar 1018 cm-3 diukur pada suhu mendekati suhu kamar. Ditemukan bahwa koefisien Seebeck-nya lebih kecil daripada koefisien Seebeck pada lapisan SOI dan lebih dekat pada koefisien Seebeck yang telah diperhitungkan, termasuk kontribusi elektroniknya. Penurunan koefisien Seebeck pada kawat Si mungkin terjadi akibat hilangnya kontribusi bagian tarikan fonon. Dari perhitungan teoretis terhadap rasiorasio pengacakan yang dilakukan dengan memperhitungkan proses-proses pengacakan di dalam sistem fonon, dapat disimpulkan bahwa kenaikan pengacakan batas-fonon dan penurunan yang terjadi pada bagian simpang dari lapisan SOI secara simultan mungkin menjadi penyebab menghilangnya efek tarikan fonon.

References

1. C. Herring, Phys. Rev. 96 (1954) 1163.
2. J.P. Jay-Gerin, Phys. Rev. B 12 (1975) 1418.
3. E.B. Ramayya, L.N. Maurer, A.H. Davoody, I.Knezevic, Phys. Rev. B 86 (2012) 115328.
4. T.H. Geballe, G.W. Hull, Phys. Rev. 98 (1955) 940.
5. L. Weber, E. Gmelin, Appl. Phys. A: Mater. Sci. Process. 53 (1991) 136.
6. E. Behnen, J. Appl. Phys. 67 (1990) 287.
7. B. Gallagher, J.P. Oxley, T. Galloway, M.J. Smith, P.N. Butcher, J. Phys. Conden. Matter. 2 (1990) 755.
8. F. Salleh, T. Oda, Y. Suzuki, Y. Kamakura, H. Ikeda, Appl. Phys. Lett. 105 (2014) 102104.
9. F. Salleh, K. Asai, A. Ishida, H. Ikeda, Appl. Phys. Express. 2 (2009) 071203.
10. F. Salleh, K. Asai, A. Ishida, H. Ikeda, J. Autom. Mobile Rob. Intell. Syst. 3 (2009) 134.
11. S. Karg, P. Mensch, B. Gotsmann, H. Schmid, P.D. Kanungo, H. Ghoneim, V. Schmidt, M.T. Björk, V. Troncale, H. Riel, J. Electron. Mater. 42 (2013) 2409.
12. B.M. Curtin, E.W. Fang, J.E. Bowers, J. Electron. Mater. 41 (2012) 887.
13. M. Asen-Palmer, K. Bartkowski, E. Gmelin, M. Cardona, A.P. Zhernov, A.V. Inyushkin, E.E. Haller, Phys. Rev. 56/15 (1997) 9431.
14. D.T. Morelli, J.P. Heremans, G.A. Slack, Phys. Rev. 66/19 (2002) 195304.

Recommended Citation

Salleh, Faiz; Oda, Takuro; Suzuki, Yuhei; Kamakura, Yoshinari; and Ikeda, Hiroya (2015) "Seebeck Coefficient of SOI Layer Induced by Phonon Transport," Makara Journal of Technology: Vol. 19: Iss. 1, Article 1.
DOI: 10.7454/mst.v19i1.3022
Available at: https://scholarhub.ui.ac.id/mjt/vol19/iss1/1