Abstract
We study nanowire silicon pin and pn-junctions at room and low temperature. Photovoltaic effects are observed for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered to have the main role for single-photon detection capability. Fundamental mechanism of dopant-based single-photon detection in nanowire pn-junction is described in details.
Bahasa Abstract
Pengamatan terhadap Efek Fotovoltaik dan Deteksi Foton Tunggal pada Simpangan-pn Silikon Kawat Nano. Kami mempelajari pin dan simpangan-pn silikon pada suhu ruangan dan suhu rendah. Efek fotovoltaik diamati pada kedua komponen pada suhu ruangan. Pada suhu rendah, komponen simpangan-pn kawat nano menunjukkan kemampuan untuk mendeteksi adanya foton tunggal. Kemampuan ini tidak ditemukan pada komponen pin. Kluster dopan boron berfosfor pada daerah deplesi dianggap memainkan peranan utama dalam kemampuannya untuk mendeteksi foton. Mekanisme dasar dari deteksi foton tunggal berbasis dopant pada simpangan-pn kawat nano digambarkan secara mendetail.
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Recommended Citation
Udhiarto, Arief; Purwiyanti, Sri; Moraru, Daniel; Mizuno, Takeshi; and Tabe, Michiharu
(2013)
"Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction,"
Makara Journal of Technology: Vol. 17:
Iss.
2, Article 3.
DOI: 10.7454/mst.v17i2.1947
Available at:
https://scholarhub.ui.ac.id/mjt/vol17/iss2/3
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