Analysis of Hole Lifetime in SOI MOSFET Single-Photon Detector

Authors

Dedy Septono Catur Putranto, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Wei Du, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Hiroaki Satoh, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Atsushi Ono, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Purnomo Sidi Priambodo, Electrical Engineering Department, University of Indonesia, Depok 16424, Indonesia
Djoko Hartanto, Electrical Engineering Department, University of Indonesia, Depok 16424, Indonesia
Hiroshi Inokawa, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, JapanFollow

Abstract

Hole lifetime in the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) singlephoton detector was evaluated by the analysis of drain current histograms for different light intensities and substrate voltages. It was found that the peaks in the histogram corresponding to the larger number of stored holes grew as the gate bias decreased. This was attributed not to the increased light absorption efficiency or collection efficiency of the photo-generated holes, but to the prolonged hole lifetime presumably caused by the higher transverse electric field inside the body of SOI MOSFET.

Bahasa Abstract

Analisis Masa Hidup Lubang pada Pendeteksi Berfoton Tunggal SOI MOSFET. Masa hidup lubang pada detektor berfoton tunggal (single-photon detector) transistor efek-medan semikonduktor-metal oksida (metal-oxidesemiconductor field-effect transistor atau MOSFET) silicon-on-insulator (SOI) dievaluasi dengan menganalisis histogram-histogram arus kering yang dihasilkan dari intensitas cahaya dan voltase substrat yang berbeda-beda. Ditemukan bahwa puncak-puncak pada histogram berkorelasi dengan sejumlah besar lubang tersimpan yang berkembang seiring dengan semakin berkurangnya bias gerbang. Ini disebabkan bukan oleh efisiensi penyerapan cahaya yang meningkat atau efisiensi pengumpulan lubang-lubang yang dipicu cahaya (photo-generated), tetapi oleh masa hidup lubang yang menjadi panjang, yang mungkin disebabkan oleh adanya medan listrik melintang di dalam badan alat SOI MOSFET.

References

W. Du, H. Inokawa, H. Satoh, International Microprocesses and Nanotechnology Conference (MNC), Kyoto, Japan, 2011, 26C-6-5L.

W. Du, H. Inokawa, H. Satoh, A. Ono, Jpn. J. Appl. Phys. 51 (2012) 06FE01.

A. Fujiwara, K. Yamazaki, Y. Takahashi, Appl. Phys. Lett. 80 (2002) 4567.

W. Du, H. Inokawa, H. Satoh, A. Ono, Optics Lett. 36 (2011) 2800.

Recommended Citation

Putranto, Dedy Septono Catur; Du, Wei; Satoh, Hiroaki; Ono, Atsushi; Priambodo, Purnomo Sidi; Hartanto, Djoko; and Inokawa, Hiroshi (2013) "Analysis of Hole Lifetime in SOI MOSFET Single-Photon Detector," Makara Journal of Technology: Vol. 17: Iss. 1, Article 2.
DOI: 10.7454/mst.v17i1.1920
Available at: https://scholarhub.ui.ac.id/mjt/vol17/iss1/2