Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor

Authors

Achmad Fadhol, Jurusan Teknik Elektro, Institut Teknologi Adhi Tama Surabaya, Surabaya 60117, IndonesiaFollow

Abstract

Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor. Heterojunction is a link formed bedween two semiconductor materials and differend bandgap which has thinness under 50nm and grow the mixture of plate SiGe as bases. The link is an abrupt link or graded one. In this research learnt formulation of doping concentration influence to basis resistance and bandgap narrowing through Si/Si1-xGex/Si Heterojunction Bipolar Transistor with abrupt emitter-basis link, besides taking care to mobility and basis wide to basis resistance, it is also influence of mole fraction to bandgap power. From the result shows that doping concentration addition of NB=5.1018 cm-3 to NB=5.1020 cm-3 in basis can decrease resistance basis value about 3.6%, increase bandgap narrowing about 0.126, and increase collector current density for about 1.36 times to Ge 24%.

Bahasa Abstract

Heterojunction adalah sambungan yang dibentuk antara dua material semikonduktor dengan bandgap yang berbeda yang mempunyai ketipisan di bawah 50nm yang menumbuhkan lapisan campuran Si1-xGex sebagai basis. Sambungan tersebut dapat berupa sambungan yang abrupt atau graded. Pada penelitian ini dipelajari formulasi dari pengaruh konsentrasi doping terhadap tahanan basis dan bandgap narrowing pada Si/Si1-xGex/Si Heterojunction Bipolar Transistor dengan sambungan emitter-basis yang abrupt, selain memperhatikan mobilitas dan lebar basis pada resistansi basis juga pengaruh fraksi mole pada energi bandgap. Dari hasil perhitungan menunjukkan bahwa penambahan konsentrasi doping dari NB=5.1018 cm-3 menjadi NB=5.1020 cm-3 pada basis dapat menurunkan nilai resistansi basis sebesar 3.6 %, menaikkan bandgap narrowing sebesar 0.126, dan meningkatkan kerapatan arus kolektor sebesar 1.36 kali pada Ge sebesar 24%.

References

Jasprit Singh, Semiconductor Optoelectronics Physics and Technology, McGraw Hill, New York, 1995.

Z. Matutinovic-Krstelj, V. Venkataraman, E.J. Prinz, J.C. Sturm, C.W. Magee, IEEE Transactions on Electron Devices 43 (1996) 457.

P. Ashburn, H. Boussetta, M.D.R. Hashim, A. Chantre, M. Mouis, G.J. Parker, G. Vincent, IEEE Transactions on Electron Devices 43 (1996) 774.

B. Le Tron, M.D.R. Hashim, P. Ashburn, M. Mouis, A. Chantre, G. Vincent, IEEE Transactions

Recommended Citation

Fadhol, Achmad (2003) "Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor," Makara Journal of Technology: Vol. 7: Iss. 1, Article 3.
DOI: 10.7454/mst.v7i1.138
Available at: https://scholarhub.ui.ac.id/mjt/vol7/iss1/3