The Effect of Irradiation of Fe and Ar Ion on the Surface Morphology of Diamond Thin Film Related to the Magnetoresistance Property

Authors

Salim Mustofa, Center for Science and Technology of Advanced Materials, National Nuclear Energy Agency (PSTBM-BATAN) PUSPIPTEK Serpong, Tangerang 15314, IndonesiaFollow
Setyo Purwanto, Center for Science and Technology of Advanced Materials, National Nuclear Energy Agency (PSTBM-BATAN) PUSPIPTEK Serpong, Tangerang 15314, Indonesia
Kenji Mishima, Department of Chemical Engineering, Faculty of Engineering, Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka 814-0180, Japan

Abstract

The irradiation of Fe and Ar ion was applied on the surface of diamond/Si thin film to know its effect on the morphology of thin film.The magnetoresistance property was also studied. Ion irradiation treatment using Fe ion followed by argon ion at the energy of 70keV and a dose of 1 x 1015 ion/cm2 have been conducted on the surface of two types of thin film, diamond/Si (111) and diamond/Si (100). Both thin films were made by using a CVD method, and the thickness of the thin film is 1000-nm. From simulations using the software called Stopping and Range of Ions in Matter (SRIM), it is known that Fe and Argon ion penetration into the surface of the thin film are respectively 512 and 603 Angstroms. After that the thin film sample was irradiated with ion Fe and Ar, and the property behavior of the morphological change of thin film were studied through Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The grain size range of thin film on diamond films / Si (100) was reduced from 115-322 nm to 147-169 nm, suggesting the effect of irradiation on the surface morphology. The magnetoresistance property is approximately 0.15% at room temperature and magnetic field external H = 0.8 Tesla.

Bahasa Abstract

Efek Iradiasi ion Fe dan Ar terhadap Morfologi Permukaan dari Lapisan Tipis Diamond terkait dengan Sifat Magnetoresistan. Iradiasi Fe dan Ar telah dilakukan pada permukaan lapisan tipis diamond/Si untuk mengetahui efek iradiasi terhadap morfologi lapisan tipis dan kemudian mempelajari sifat magnetoresistannya. Proses iradiasi dilakukan memakai ion Fe yang dilanjutkan dengan ion Argon pada energi 70keV dan dosis 1 x 1015 ion/cm2 ke permukaan 2 jenis lapisan tipis, yaitu diamond/Si (111) dan diamond/Si (100). Kedua lapisan tipis ini difabrikasi memakai metode CVD dengan ketebalan 1000 nm. Dari simulasi memakai piranti lunak yang dinamakan Stopping and Range of Ions in Matter (SRIM), diketahui bahwa penetrasi ion Fe dan Argon ke dalam permukaan lapisan tipis adalah berkisar 512 dan 603 Angstroms. Setelah lapisan tipis diiradiasi dengan ion Fe dan Ar, kemudian dipelajari perubahan morfologi dari lapisan tipis memakai Scanning Electron Microscopy (SEM) dan Atomic Force Microscopy (AFM). Rentang ukuran butiran lapisan tipis pada diamond/Si (100) mengalami penuruan dari 115-322 nm ke 147-169 nm. Hal ini menunjukkan adanya efek iradiasi ion ke morfologi permukaan. Sifat magnetoresistan pada kisaran 0,15% pada suhu kamar dan di bawah medan magnet H = 0,8 Tesla.

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Recommended Citation

Mustofa, Salim; Purwanto, Setyo; and Mishima, Kenji (2016) "The Effect of Irradiation of Fe and Ar Ion on the Surface Morphology of Diamond Thin Film Related to the Magnetoresistance Property," Makara Journal of Technology: Vol. 20: Iss. 2, Article 6.
DOI: 10.7454/mst.v20i2.3061
Available at: https://scholarhub.ui.ac.id/mjt/vol20/iss2/6