Observation of Tunneling Effects in Lateral Nanowire pn Junctions

Authors

Sri Purwiyanti, Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, JapanFollow
Arief Udhiarto, Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan
Daniel Moraru, Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan
Takeshi Mizuno, Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan
Djoko Hartanto, Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Depok 16424, Indonesia
Michiharu Tabe, Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan

Abstract

As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between the doping profiles, since the pn junctions contain a co-doped region, while the pin junctions contain an i-layer.

Bahasa Abstract

Pengamatan Efek Penyaluran dalam Persimpangan pn Pengantar Ukuran Nano Lateral. Sebagaimana dimensidimensi peralatan elektronik secara terus-menerus berkurang ukurannya, kondisi-kondisi bias yang diaplikasikan secara signifikan berubah dan mekanisme pengangkutan harus dipertimbangkan kembali. Peralatan penyaluran menjanjikan alat elektronik yang berukuran lebih kecil dan ringan karena diharapkannya pengoperasian dengan kecepatan tinggi dan bias yang secara relatif rendah. Dalam penelitian ini, kami menyelidiki fitur-fitur penyaluran dalam persimpangan pn pengantar ukuran nano lateral silikon pada insulator dan alat-alat persimpangan berukuran jarum. Dengan mengendalikan tegangan substrat, fitur-fitur penyaluran dapat diamati dalam karakteristik-karakteristik listrik. Kami menemukan bahwa tegangan substrat minimum yang diperlukan untuk penyaluran untuk terjadi dalam persimpangan pn lebih tinggi dibandingkan dengan persimpangan berukuran jarum. Penyebab utama efek-efek ini mengandalkan pada perbedaan-perbedaan antara profil-profil dengan doping, karena persimpangan pn berisi daerah yang dico-doped, sementara persimpangan seukuran jarum berisi lapisan i.

References

The Semiconductor Industry Association, The International Technology Roadmap for Semiconductors (ITRS), 2011 Edition, http://www.itrs.net/, 2011.

L. Esaki, Phys. Rev. 109 (1958) 603.

A.M. Ionescu, H. Riel, Nature 479 (2011) 329.

D. Leonelli, A. Vandooreen, R. Rooyackers, S.D. Gendt, M.M. Heyns, G. Groeseneken, Solid-State Electron. 65-66 (2011) 28.

S.M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, New York, 1981, p.880.

S. Sedlmeier, J. Schulze, T. Sulima, C. Fink, C. Tolksdorf, A. Bayerstadler, I. Eisele, P.F. Wang, K. Hildensenbeck, W. Hansch, Mater. Sci. Eng. B 89 (2002) 116.

H. Schmid, C. Bessire, M.T. Bjork, A. Schenk, H. Riel, Nano Lett. 12 (2012) 699.

C.D. Bessire, M.T. Bjork, H. Schmid, A. Schenk, K.B. Reuter, H. Riel, Nano Lett. 11 (2011) 4195.

C. Aydin, A. Zaslavsky, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, S. Deleonibus, Appl. Phys. Lett. 84 (2004) 1780.

Recommended Citation

Purwiyanti, Sri; Udhiarto, Arief; Moraru, Daniel; Mizuno, Takeshi; Hartanto, Djoko; and Tabe, Michiharu (2014) "Observation of Tunneling Effects in Lateral Nanowire pn Junctions," Makara Journal of Technology: Vol. 18: Iss. 2, Article 8.
DOI: 10.7454/mst.v18i2.2948
Available at: https://scholarhub.ui.ac.id/mjt/vol18/iss2/8